IRF3610STRLPBF Infineon Technologies
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 209+ | 2.66 EUR |
| 500+ | 2.44 EUR |
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Technische Details IRF3610STRLPBF Infineon Technologies
Description: MOSFET N-CH 100V 103A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 103A (Tc), Rds On (Max) @ Id, Vgs: 11.6mOhm @ 62A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO263-3, Part Status: Active, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V.
Weitere Produktangebote IRF3610STRLPBF nach Preis ab 2.01 EUR bis 6.83 EUR
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IRF3610STRLPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 100V 103A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 49365 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3610STRLPBF | Hersteller : Infineon Technologies |
MOSFETs PLANAR 40<-<100V |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF3610STRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 103A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3610STRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 103A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 62A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Active Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V |
auf Bestellung 184 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF3610STRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 103A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3610STRLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 73A Power dissipation: 333W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel Gate charge: 0.1µC Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRF3610STRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 103A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 62A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Active Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF3610STRLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 73A Power dissipation: 333W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel Gate charge: 0.1µC |
Produkt ist nicht verfügbar |