IRF362 International Rectifier
Hersteller: International Rectifier
Description: N-CHANNEL HERMETIC MOS HEXFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A
Power Dissipation (Max): 300W
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Drain to Source Voltage (Vdss): 400 V
Description: N-CHANNEL HERMETIC MOS HEXFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A
Power Dissipation (Max): 300W
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Drain to Source Voltage (Vdss): 400 V
auf Bestellung 160 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
31+ | 23.86 EUR |
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Technische Details IRF362 International Rectifier
Description: N-CHANNEL HERMETIC MOS HEXFET, Packaging: Bulk, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A, Power Dissipation (Max): 300W, Supplier Device Package: TO-204AA (TO-3), Part Status: Active, Drain to Source Voltage (Vdss): 400 V.
Weitere Produktangebote IRF362
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRF362 | Hersteller : Infineon / IR | MOSFET |
Produkt ist nicht verfügbar |