Technische Details IRF3707ZS IR
Description: MOSFET N-CH 30V 59A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 59A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 2.25V @ 250µA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V.
Weitere Produktangebote IRF3707ZS
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IRF3707ZS | Hersteller : IR |
 07+ TO-263 |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF3707ZS Produktcode: 99467 |
Hersteller : IR |
Transistoren > MOSFET N-CH Gehäuse: D2Pak (TO-263-3) Uds,V: 30 Idd,A: 42 Rds(on), Ohm: 9.5 mOhm Ciss, pF/Qg, nC: 07.09.1210 JHGF: SMD |
Produkt ist nicht verfügbar
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IRF3707ZS | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 59A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V |
Produkt ist nicht verfügbar |