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IRF3710STRRPBF

IRF3710STRRPBF Infineon / IR


Infineon_IRF3710S_DataSheet_v01_01_EN-1732478.pdf Hersteller: Infineon / IR
MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC
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Technische Details IRF3710STRRPBF Infineon / IR

Description: MOSFET N-CH 100V 57A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V.

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IRF3710STRRPBF IRF3710STRRPBF Hersteller : Infineon Technologies infineon-irf3710s-datasheet-v01_01-en.pdf Trans MOSFET N-CH Si 100V 57A 3-Pin(2+Tab) D2PAK T/R
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IRF3710STRRPBF IRF3710STRRPBF Hersteller : Infineon Technologies infineon-irf3710s-datasheet-v01_01-en.pdf Trans MOSFET N-CH Si 100V 57A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IRF3710STRRPBF IRF3710STRRPBF Hersteller : INFINEON TECHNOLOGIES irf3710spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF3710STRRPBF IRF3710STRRPBF Hersteller : Infineon Technologies irf3710spbf.pdf?fileId=5546d462533600a4015355df9dff1949 Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
Produkt ist nicht verfügbar
IRF3710STRRPBF IRF3710STRRPBF Hersteller : INFINEON TECHNOLOGIES irf3710spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar