IRF3808SPBF
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 11.91 EUR |
| 10+ | 10.54 EUR |
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Technische Details IRF3808SPBF IR
Description: MOSFET N-CH 75V 106A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V.
Weitere Produktangebote IRF3808SPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF3808SPBF Produktcode: 129658 |
 Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IRF3808SPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK Tube |
Produkt ist nicht verfügbar |
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IRF3808SPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 75V 106A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF3808SPBF | Hersteller : Infineon Technologies |
MOSFET 75V 1 N-CH HEXFET 7mOhms 150nC |
Produkt ist nicht verfügbar |