IRF40DM229 Infineon Technologies
Hersteller: Infineon TechnologiesIRF40DM229 Infineon Technologies AG Transistors MOSFETs N-CH 40V 159A 6-Pin WDSON T/R - Arrow.com
auf Bestellung 736 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 213+ | 2.58 EUR |
| 500+ | 2.24 EUR |
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Technische Details IRF40DM229 Infineon Technologies
Description: MOSFET N-CH 40V 159A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MF, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 159A (Tc), Rds On (Max) @ Id, Vgs: 1.85mOhm @ 97A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 100µA, Supplier Device Package: DirectFET™ Isometric MF, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5317 pF @ 25 V.
Weitere Produktangebote IRF40DM229 nach Preis ab 1.98 EUR bis 4.33 EUR
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IRF40DM229 | Hersteller : International Rectifier |
Description: MOSFET N-CH 40V 159A DIRECTFET Packaging: Bulk Package / Case: DirectFET™ Isometric MF Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 159A (Tc) Rds On (Max) @ Id, Vgs: 1.85mOhm @ 97A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: DirectFET™ Isometric MF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5317 pF @ 25 V |
auf Bestellung 4396 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF40DM229 | Hersteller : Infineon Technologies |
Description: IRF40 - 12V-300V N-CHANNEL POWER Packaging: Bulk Package / Case: DirectFET™ Isometric MF Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 159A (Tc) Rds On (Max) @ Id, Vgs: 1.85mOhm @ 97A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: DirectFET™ Isometric MF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5317 pF @ 25 V |
auf Bestellung 3981 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF40DM229 | Hersteller : Infineon Technologies |
MOSFET TRENCH <= 40V |
auf Bestellung 844 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF40DM229 | Hersteller : International Rectifier HiRel Products |
IRF40DM229 |
auf Bestellung 1767 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF40DM229 | Hersteller : International Rectifier HiRel Products |
IRF40DM229 |
auf Bestellung 2629 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF40DM229 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 159A 6-Pin WDSON T/R |
Produkt ist nicht verfügbar |
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IRF40DM229 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 159A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MF Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 159A (Tc) Rds On (Max) @ Id, Vgs: 1.85mOhm @ 97A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: DirectFET™ Isometric MF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5317 pF @ 25 V |
Produkt ist nicht verfügbar |