Technische Details IRF40H233XTMA1 Infineon Technologies
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W, Type of transistor: N-MOSFET x2, Technology: StrongIRFET™, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 32A, Pulsed drain current: 140A, Power dissipation: 50W, Case: PQFN5X6, Gate-source voltage: ±20V, On-state resistance: 6.2mΩ, Mounting: SMD, Kind of channel: enhancement, Anzahl je Verpackung: 4000 Stücke.
Weitere Produktangebote IRF40H233XTMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF40H233XTMA1 | Hersteller : Infineon Technologies |
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IRF40H233XTMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W Type of transistor: N-MOSFET x2 Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 32A Pulsed drain current: 140A Power dissipation: 50W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRF40H233XTMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Supplier Device Package: PG-TDSON-8-900 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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IRF40H233XTMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W Type of transistor: N-MOSFET x2 Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 32A Pulsed drain current: 140A Power dissipation: 50W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |