| Anzahl | Preis |
|---|---|
| 800+ | 0.85 EUR |
| 1600+ | 0.81 EUR |
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Technische Details IRF510STRLPBF Vishay
Description: MOSFET N-CH 100V 5.6A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V, Power Dissipation (Max): 43W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V.
Weitere Produktangebote IRF510STRLPBF nach Preis ab 0.84 EUR bis 3.26 EUR
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IRF510STRLPBF | Vishay |
 Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF510STRLPBF | Vishay Semiconductors |
MOSFETs TO263 100V 5.6A N-CH MOSFET |
auf Bestellung 802 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF510STRLPBF | Vishay Siliconix |
Description: MOSFET N-CH 100V 5.6A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
auf Bestellung 148 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF510STRLPBF |
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Hersteller: Vishay
Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 800+ | 0.86 EUR |
| 1600+ | 0.84 EUR |
| IRF510STRLPBF |
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Hersteller: Vishay Semiconductors
MOSFETs TO263 100V 5.6A N-CH MOSFET
MOSFETs TO263 100V 5.6A N-CH MOSFET
auf Bestellung 802 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 3.26 EUR |
| 10+ | 2.08 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.09 EUR |
| 800+ | 0.94 EUR |
| 2400+ | 0.89 EUR |
| IRF510STRLPBF |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Description: MOSFET N-CH 100V 5.6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.26 EUR |
| 10+ | 2.08 EUR |
| 100+ | 1.41 EUR |