auf Bestellung 570 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 153+ | 0.96 EUR |
Produktrezensionen
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Technische Details IRF510STRRPBF Vishay
Description: MOSFET N-CH 100V 5.6A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V, Power Dissipation (Max): 3.7W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V.
Weitere Produktangebote IRF510STRRPBF nach Preis ab 0.85 EUR bis 1.89 EUR
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IRF510STRRPBF | Hersteller : Vishay Semiconductors |
 MOSFETs TO263 100V 5.6A N-CH MOSFET |
auf Bestellung 561 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF510STRRPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 5.6A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
auf Bestellung 1452 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF510STRRPBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF510STRRPBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRF510STRRPBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| IRF510STRRPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5A Power dissipation: 43W Case: D2PAK; TO263 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 20A Gate charge: 8.3nC Gate-source voltage: ±20V On-state resistance: 0.54Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRF510STRRPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 5.6A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IRF510STRRPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5A Power dissipation: 43W Case: D2PAK; TO263 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 20A Gate charge: 8.3nC Gate-source voltage: ±20V On-state resistance: 0.54Ω |
Produkt ist nicht verfügbar |