IRF5803TR Infineon
Hersteller: InfineonTransistor P-Channel MOSFET; 40V; 20V; 190mOhm; 3,4A; 2W; -55°C ~ 150°C; IRF5803 TIRF5803
Anzahl je Verpackung: 25 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 0.75 EUR |
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Technische Details IRF5803TR Infineon
Description: MOSFET P-CH 40V 3.4A MICRO6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: Micro6™(TSOP-6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V.
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IRF5803TR | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 40V 3.4A MICRO6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Micro6™(TSOP-6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V |
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