IRF5805

IRF5805 Infineon Technologies


irf5805pbf.pdf?fileId=5546d462533600a4015355e3f3be19ba Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 3.8A MICRO6
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 25 V
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Technische Details IRF5805 Infineon Technologies

Description: MOSFET P-CH 30V 3.8A MICRO6, Packaging: Tube, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Rds On (Max) @ Id, Vgs: 98mOhm @ 3.8A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: Micro6™(TSOP-6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 25 V.

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IRF5805 IRF5805 Hersteller : Infineon / IR irf5805pbf.pdf?fileId=5546d462533600a4015355e3f3be19ba MOSFET
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