Technische Details IRF60B217 Infineon Technologies
Description: MOSFET N-CH 60V 60A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 50µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V.
Weitere Produktangebote IRF60B217 nach Preis ab 0.72 EUR bis 3.63 EUR
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IRF60B217 | Infineon Technologies |
 Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220AB Full-Pak Tube |
auf Bestellung 4222 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF60B217 | Infineon Technologies |
Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220AB Full-Pak Tube |
auf Bestellung 2645 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF60B217 | International Rectifier |
Description: TRENCH 40<-<100V Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V |
auf Bestellung 3166 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF60B217 | Infineon Technologies |
Description: MOSFET N-CH 60V 60A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V |
auf Bestellung 645 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF60B217 | Infineon Technologies |
MOSFETs 60V, 60A, 9.0 mOhm 44 nC Qg |
auf Bestellung 469 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF60B217 | International Rectifier HiRel Products |
Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220AB Full-Pak Tube |
auf Bestellung 2830 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF60B217 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220AB Full-Pak Tube
Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220AB Full-Pak Tube
auf Bestellung 4222 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 205+ | 0.72 EUR |
| IRF60B217 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220AB Full-Pak Tube
Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220AB Full-Pak Tube
auf Bestellung 2645 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 337+ | 1.63 EUR |
| 500+ | 1.45 EUR |
| 1000+ | 1.31 EUR |
| IRF60B217 |
|
Hersteller: International Rectifier
Description: TRENCH 40<-<100V
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
Description: TRENCH 40<-<100V
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
auf Bestellung 3166 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 269+ | 1.7 EUR |
| IRF60B217 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
auf Bestellung 645 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 269+ | 1.7 EUR |
| IRF60B217 |
|
Hersteller: Infineon Technologies
MOSFETs 60V, 60A, 9.0 mOhm 44 nC Qg
MOSFETs 60V, 60A, 9.0 mOhm 44 nC Qg
auf Bestellung 469 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.63 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.74 EUR |
| 500+ | 1.22 EUR |
| 1000+ | 1.03 EUR |
| IRF60B217 |
|
Hersteller: International Rectifier HiRel Products
Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220AB Full-Pak Tube
Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220AB Full-Pak Tube
auf Bestellung 2830 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 337+ | 1.63 EUR |
| 500+ | 1.45 EUR |
| 1000+ | 1.31 EUR |