IRF614

IRF614 Harris Corporation


HRISSD97-1.pdf?t.download=true&u=5oefqw Hersteller: Harris Corporation
Description: ADVANCED POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 695 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
695+1.08 EUR
Mindestbestellmenge: 695
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Technische Details IRF614 Harris Corporation

Description: MOSFET N-CH 250V 2.7A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V.

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IRF614 Hersteller : IR irf614.pdf HRISSD97-1.pdf?t.download=true&u=5oefqw 09+
auf Bestellung 5030 Stücke:
Lieferzeit 21-28 Tag (e)
IRF614 IRF614
Produktcode: 7922
Hersteller : IR IRF614.pdf Transistoren > MOSFET N-CH
Gehäuse: TO-263
Uds,V: 250
Idd,A: 02.08.2015
Rds(on), Ohm: 2
Ciss, pF/Qg, nC: 05.08.180
JHGF: SMD
Produkt ist nicht verfügbar
IRF614 IRF614 Hersteller : Vishay Siliconix irf614.pdf Description: MOSFET N-CH 250V 2.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Produkt ist nicht verfügbar
IRF614 IRF614 Hersteller : Vishay / Siliconix irf614.pdf HRISSD97-1.pdf?t.download=true&u=5oefqw MOSFET RECOMMENDED ALT 844-IRF614PBF
Produkt ist nicht verfügbar