auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.5 EUR |
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Technische Details IRF620PBF-BE3 Vishay
Description: MOSFET N-CH 200V 5.2A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.
Weitere Produktangebote IRF620PBF-BE3 nach Preis ab 0.54 EUR bis 1.29 EUR
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IRF620PBF-BE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 200V 5.2A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF620PBF-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 5.2A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V |
auf Bestellung 2079 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF620PBF-BE3 | Hersteller : Vishay / Siliconix |
MOSFETs TO220 200V 5.2A N-CH MOSFET |
auf Bestellung 2997 Stücke: Lieferzeit 10-14 Tag (e) |
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