IRF620STRR Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
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Technische Details IRF620STRR Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: D²PAK (TO-263), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc), FET Type: N-Channel.