
IRF6216TRPBF Infineon Technologies
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
4000+ | 0.64 EUR |
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Technische Details IRF6216TRPBF Infineon Technologies
Description: MOSFET P-CH 150V 2.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V.
Weitere Produktangebote IRF6216TRPBF nach Preis ab 1.46 EUR bis 1.46 EUR
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IRF6216TRPBF | Hersteller : Infineon Technologies |
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auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6216TRPBF | Hersteller : International Rectifier Corporation |
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auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6216TRPBF | Hersteller : Infineon Technologies |
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IRF6216TRPBF | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IRF6216TRPBF | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8 Kind of channel: enhancement Mounting: SMD Case: SO8 Drain-source voltage: -150V Drain current: -2.2A Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRF6216TRPBF | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF6216TRPBF | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF6216TRPBF | Hersteller : Infineon / IR |
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Produkt ist nicht verfügbar |
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IRF6216TRPBF | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8 Kind of channel: enhancement Mounting: SMD Case: SO8 Drain-source voltage: -150V Drain current: -2.2A Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel Technology: HEXFET® |
Produkt ist nicht verfügbar |