IRF6218PBF-IR International Rectifier
Hersteller: International Rectifier
Description: MOSFET P-CH 150V 27A TO220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Supplier Device Package: TO-220AB
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details IRF6218PBF-IR International Rectifier
Description: MOSFET P-CH 150V 27A TO220AB, Vgs(th) (Max) @ Id: 5V @ 250µA, Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Supplier Device Package: TO-220AB, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.