Technische Details IRF624 IR
Description: MOSFET N-CH 250V 4.4A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.6A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.
Weitere Produktangebote IRF624
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IRF624 Produktcode: 7924 |
Hersteller : IR |
 Transistoren > MOSFET N-CHGehäuse: TO-220 Uds,V: 250 Idd,A: 04.01.2015 Rds(on), Ohm: 01.01.2015 Ciss, pF/Qg, nC: 335/14 JHGF: THT |
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IRF624 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 250V 4.4A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.6A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF624 | Hersteller : Vishay / Siliconix |
MOSFET RECOMMENDED ALT IRF624PBF |
Produkt ist nicht verfügbar |