| Anzahl | Preis |
|---|---|
| 176+ | 0.82 EUR |
| 183+ | 0.78 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.71 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF630SPBF Vishay
Description: MOSFET N-CH 200V 9A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V, Power Dissipation (Max): 3W (Ta), 74W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V.
Weitere Produktangebote IRF630SPBF nach Preis ab 0.65 EUR bis 3.92 EUR
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IRF630SPBF | Vishay |
  Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF630SPBF | Vishay |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF630SPBF | Vishay |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF630SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Mounting: SMD Polarisation: unipolar Kind of package: tube Gate charge: 43nC Type of transistor: N-MOSFET On-state resistance: 0.4Ω Drain current: 5.7A Gate-source voltage: ±20V Kind of channel: enhancement Pulsed drain current: 36A Power dissipation: 74W Drain-source voltage: 200V Case: D2PAK; TO263 |
auf Bestellung 166 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF630SPBF | Vishay |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK |
auf Bestellung 166 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF630SPBF | Vishay Siliconix |
Description: MOSFET N-CH 200V 9A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V Power Dissipation (Max): 3W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
auf Bestellung 1002 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF630SPBF | Vishay Semiconductors |
MOSFETs TO263 200V 9A N-CH MOSFET |
auf Bestellung 3197 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRF630SPBF | |
|
Hersteller: Vishay
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.87 EUR |
| IRF630SPBF | |
|
Hersteller: Vishay
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.88 EUR |
| IRF630SPBF | |
|
Hersteller: Vishay
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 160+ | 0.91 EUR |
| 176+ | 0.79 EUR |
| 183+ | 0.74 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.65 EUR |
| IRF630SPBF | |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Gate charge: 43nC
Type of transistor: N-MOSFET
On-state resistance: 0.4Ω
Drain current: 5.7A
Gate-source voltage: ±20V
Kind of channel: enhancement
Pulsed drain current: 36A
Power dissipation: 74W
Drain-source voltage: 200V
Case: D2PAK; TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Gate charge: 43nC
Type of transistor: N-MOSFET
On-state resistance: 0.4Ω
Drain current: 5.7A
Gate-source voltage: ±20V
Kind of channel: enhancement
Pulsed drain current: 36A
Power dissipation: 74W
Drain-source voltage: 200V
Case: D2PAK; TO263
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 64+ | 1.13 EUR |
| 88+ | 0.82 EUR |
| 100+ | 0.78 EUR |
| IRF630SPBF | |
|
Hersteller: Vishay
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 1.59 EUR |
| 100+ | 1.49 EUR |
| IRF630SPBF | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 1002 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.87 EUR |
| 50+ | 1.89 EUR |
| 100+ | 1.7 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.25 EUR |
| IRF630SPBF | |
|
Hersteller: Vishay Semiconductors
MOSFETs TO263 200V 9A N-CH MOSFET
MOSFETs TO263 200V 9A N-CH MOSFET
auf Bestellung 3197 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 3.92 EUR |
| 10+ | 1.92 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.35 EUR |
| 1000+ | 1.3 EUR |
| 2000+ | 1.25 EUR |
| 5000+ | 1.2 EUR |