auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 141+ | 1.03 EUR |
| 145+ | 0.97 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.8 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF630SPBF Vishay
Description: MOSFET N-CH 200V 9A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V, Power Dissipation (Max): 3W (Ta), 74W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V.
Weitere Produktangebote IRF630SPBF nach Preis ab 0.67 EUR bis 1.53 EUR
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IRF630SPBF | Hersteller : Vishay |
 Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF630SPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement Gate charge: 43nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 184 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF630SPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement Gate charge: 43nC Kind of package: tube |
auf Bestellung 184 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF630SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF630SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF630SPBF | Hersteller : Vishay Semiconductors |
MOSFETs TO263 200V 9A N-CH MOSFET |
auf Bestellung 4295 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF630SPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 9A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V Power Dissipation (Max): 3W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
auf Bestellung 1035 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF630SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF630SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |