IRF634PBF Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 8.1A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details IRF634PBF Vishay Siliconix
Description: MOSFET N-CH 250V 8.1A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 74W (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IRF634PBF nach Preis ab 1.32 EUR bis 4.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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IRF634PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF634PBF | Vishay Semiconductors |
MOSFETs TO220 250V 8.1A N-CH MOSFET |
auf Bestellung 5365 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF634PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 2.42 EUR |
| 50+ | 1.7 EUR |
| IRF634PBF |
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Hersteller: Vishay Semiconductors
MOSFETs TO220 250V 8.1A N-CH MOSFET
MOSFETs TO220 250V 8.1A N-CH MOSFET
auf Bestellung 5365 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.44 EUR |
| 10+ | 1.93 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.42 EUR |
| 10000+ | 1.32 EUR |