IRF640NSTRLPBF Infineon Technologies
auf Bestellung 6400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 0.75 EUR |
| 1600+ | 0.71 EUR |
| 2400+ | 0.68 EUR |
| 4000+ | 0.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF640NSTRLPBF Infineon Technologies
Description: MOSFET N-CH 200V 18A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IRF640NSTRLPBF nach Preis ab 0.59 EUR bis 3.19 EUR
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IRF640NSTRLPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 6400 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640NSTRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 18A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF640NSTRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1196 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640NSTRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 519 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640NSTRLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Kind of package: reel Anzahl je Verpackung: 1 Stücke |
auf Bestellung 549 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF640NSTRLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Kind of package: reel |
auf Bestellung 549 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640NSTRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 519 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640NSTRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 18A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 4501 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF640NSTRLPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT 200V 18A 150mOhm 44.7nC |
auf Bestellung 21262 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF640NSTRLPBF | Hersteller : INFINEON |
Description: INFINEON - IRF640NSTRLPBF - Leistungs-MOSFET, n-Kanal, 200 V, 18 A, 0.15 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.15ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1962 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640NSTRLPBF | Hersteller : INFINEON |
Description: INFINEON - IRF640NSTRLPBF - Leistungs-MOSFET, n-Kanal, 200 V, 18 A, 0.15 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.15ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1962 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640NSTRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640NSTRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |