IRF6616TRPBF International Rectifier
Hersteller: International Rectifier
Description: IRF6616 - MOSFET, 40V, 106A, 5.0
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 19A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3765 pF @ 20 V
Description: IRF6616 - MOSFET, 40V, 106A, 5.0
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 19A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3765 pF @ 20 V
auf Bestellung 4878 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
241+ | 3 EUR |
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Technische Details IRF6616TRPBF International Rectifier
Description: IRF6616 - MOSFET, 40V, 106A, 5.0, Packaging: Bulk, Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 106A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 19A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2.25V @ 250µA, Supplier Device Package: DIRECTFET™ MX, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3765 pF @ 20 V.
Weitere Produktangebote IRF6616TRPBF nach Preis ab 3.69 EUR bis 7.93 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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IRF6616TRPBF | Hersteller : Infineon Technologies | MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs |
auf Bestellung 4903 Stücke: Lieferzeit 14-28 Tag (e) |
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IRF6616TRPBF | Hersteller : INFINEON |
Description: INFINEON - IRF6616TRPBF - Leistungs-MOSFET, n-Kanal, 40 V, 106 A, 0.0037 ohm, DirectFET MX, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 106A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.8V euEccn: NLR Verlustleistung: 89W Anzahl der Pins: 7Pins productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0037ohm |
auf Bestellung 1495 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6616TRPBF | Hersteller : INFINEON |
Description: INFINEON - IRF6616TRPBF - Leistungs-MOSFET, n-Kanal, 40 V, 106 A, 0.0037 ohm, DirectFET MX, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 106A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.8V euEccn: NLR Verlustleistung: 89W Anzahl der Pins: 7Pins productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0037ohm |
auf Bestellung 1495 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6616TRPBF | Hersteller : Infineon Technologies | Trans MOSFET N-CH Si 40V 19A 7-Pin Direct-FET MX T/R |
Produkt ist nicht verfügbar |