IRF6618TRPBF Infineon Technologies
auf Bestellung 4595 Stücke:
Lieferzeit 302-306 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.05 EUR |
| 10+ | 4.56 EUR |
| 100+ | 3.66 EUR |
| 500+ | 3.01 EUR |
| 1000+ | 2.32 EUR |
| 2500+ | 2.24 EUR |
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Technische Details IRF6618TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 30A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MT, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 250µA, Supplier Device Package: DIRECTFET™ MT, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 15 V.
Weitere Produktangebote IRF6618TRPBF nach Preis ab 1.82 EUR bis 5.53 EUR
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IRF6618TRPBF | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 30V 30A DIRECTFETPackaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MT Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 250µA Supplier Device Package: DIRECTFET™ MT Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 15 V |
auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF6618TRPBF | Hersteller : Infineon Technologies |
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| IRF6618TRPBF | Hersteller : INFINEON TECHNOLOGIES |
IRF6618TRPBF SMD N channel transistors |
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IRF6618TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 30A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MT Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 250µA Supplier Device Package: DIRECTFET™ MT Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 15 V |
Produkt ist nicht verfügbar |