IRF6618TRPBF Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 5.05 EUR |
| 10+ | 4.56 EUR |
| 100+ | 3.66 EUR |
| 500+ | 3.01 EUR |
| 1000+ | 2.32 EUR |
| 2500+ | 2.24 EUR |
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Technische Details IRF6618TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 30A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Last Time Buy, Supplier Device Package: DIRECTFET™ MT, Vgs(th) (Max) @ Id: 2.35V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MT, Packaging: Tape & Reel (TR).
Weitere Produktangebote IRF6618TRPBF nach Preis ab 1.82 EUR bis 5.53 EUR
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IRF6618TRPBF | Infineon Technologies |
 Description: MOSFET N-CH 30V 30A DIRECTFETTechnology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MT Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Last Time Buy Supplier Device Package: DIRECTFET™ MT Vgs(th) (Max) @ Id: 2.35V @ 250µA Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc) FET Type: N-Channel |
auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF6618TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A DIRECTFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MT
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: DIRECTFET™ MT
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 30V 30A DIRECTFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MT
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: DIRECTFET™ MT
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc)
FET Type: N-Channel
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.53 EUR |
| 10+ | 3.6 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.04 EUR |
| 1000+ | 1.89 EUR |
| 2000+ | 1.82 EUR |