IRF6619 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 30A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 5040 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
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Technische Details IRF6619 Infineon Technologies
Description: MOSFET N-CH 20V 30A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 5040 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DIRECTFET™ MX, Vgs(th) (Max) @ Id: 2.45V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MX, Packaging: Tape & Reel (TR).
Weitere Produktangebote IRF6619 nach Preis ab 2.23 EUR bis 2.92 EUR
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IRF6619 | Infineon Technologies |
Description: MOSFET N-CH 20V 30A DIRECTFET Input Capacitance (Ciss) (Max) @ Vds: 5040 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DIRECTFET™ MX Vgs(th) (Max) @ Id: 2.45V @ 250µA Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MX Packaging: Cut Tape (CT) |
auf Bestellung 13859 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRF6619 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 30A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 5040 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 30A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 5040 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Cut Tape (CT)
auf Bestellung 13859 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.92 EUR |
| 10+ | 2.48 EUR |
| 100+ | 2.23 EUR |