Produkte > IR > IRF6620TR1

IRF6620TR1


IRF6620(TR1).pdf Hersteller: IR
0527+
auf Bestellung 1000 Stücke:

Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details IRF6620TR1 IR

Description: MOSFET N-CH 20V 27A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 27A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2.45V @ 250µA, Supplier Device Package: DIRECTFET™ MX, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4130 pF @ 10 V.

Weitere Produktangebote IRF6620TR1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRF6620TR1 IRF6620TR1 Hersteller : Infineon Technologies IRF6620(TR1).pdf Description: MOSFET N-CH 20V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4130 pF @ 10 V
Produkt ist nicht verfügbar