IRF6646TRPBF Infineon Technologies
auf Bestellung 29168 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 88+ | 1.69 EUR |
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Technische Details IRF6646TRPBF Infineon Technologies
Description: MOSFET N-CH 80V 12A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 4.9V @ 150µA, Supplier Device Package: DIRECTFET™ MN, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V.
Weitere Produktangebote IRF6646TRPBF nach Preis ab 1.34 EUR bis 4.59 EUR
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IRF6646TRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R |
auf Bestellung 29168 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6646TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6646TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R |
auf Bestellung 4304 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6646TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R |
auf Bestellung 4304 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6646TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R |
auf Bestellung 13281 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6646TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R |
auf Bestellung 75862 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6646TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 80V 12A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 150µA Supplier Device Package: DIRECTFET™ MN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V |
auf Bestellung 1986 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF6646TRPBF | Hersteller : Infineon Technologies |
MOSFETs 80V 1 N-CH HEXFET 9.5mOhms 36nC |
auf Bestellung 5338 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF6646TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R |
Produkt ist nicht verfügbar |
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IRF6646TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R |
Produkt ist nicht verfügbar |
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IRF6646TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 89W Technology: HEXFET® Anzahl je Verpackung: 4800 Stücke |
Produkt ist nicht verfügbar |
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IRF6646TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 80V 12A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 150µA Supplier Device Package: DIRECTFET™ MN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF6646TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 89W Technology: HEXFET® |
Produkt ist nicht verfügbar |