IRF6646TRPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 12A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 4800+ | 1.43 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
4800 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF6646TRPBF Infineon Technologies
Description: MOSFET N-CH 80V 12A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 4.9V @ 150µA, Supplier Device Package: DIRECTFET™ MN, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V.
Weitere Produktangebote IRF6646TRPBF nach Preis ab 1.61 EUR bis 6.22 EUR
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IRF6646TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R |
auf Bestellung 29168 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6646TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R |
auf Bestellung 29168 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6646TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6646TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R |
auf Bestellung 4304 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6646TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R |
auf Bestellung 4304 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6646TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R |
auf Bestellung 13281 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6646TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R |
auf Bestellung 75862 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6646TRPBF | Infineon Technologies |
Description: MOSFET N-CH 80V 12A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 150µA Supplier Device Package: DIRECTFET™ MN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V |
auf Bestellung 4840 Stücke: Lieferzeit 10-14 Tag (e) |
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 |
IRF6646TRPBF | Infineon Technologies |
MOSFETs 80V 1 N-CH HEXFET 9.5mOhms 36nC |
auf Bestellung 7640 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF6646TRPBF |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R
auf Bestellung 29168 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 88+ | 2.03 EUR |
| IRF6646TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R
auf Bestellung 29168 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 88+ | 2.03 EUR |
| IRF6646TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R
auf Bestellung 4800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 2.09 EUR |
| IRF6646TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R
auf Bestellung 4304 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 83+ | 2.15 EUR |
| 84+ | 1.98 EUR |
| 100+ | 1.88 EUR |
| 250+ | 1.8 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.62 EUR |
| 3000+ | 1.61 EUR |
| IRF6646TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R
auf Bestellung 4304 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 83+ | 2.15 EUR |
| 84+ | 2.05 EUR |
| 100+ | 1.99 EUR |
| 250+ | 1.94 EUR |
| 500+ | 1.9 EUR |
| 1000+ | 1.84 EUR |
| 3000+ | 1.83 EUR |
| IRF6646TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R
auf Bestellung 13281 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 240+ | 2.78 EUR |
| 500+ | 2.63 EUR |
| 1000+ | 2.43 EUR |
| IRF6646TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R
auf Bestellung 75862 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 240+ | 2.78 EUR |
| 500+ | 2.63 EUR |
| 1000+ | 2.43 EUR |
| IRF6646TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 12A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
Description: MOSFET N-CH 80V 12A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
auf Bestellung 4840 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.88 EUR |
| 10+ | 3.15 EUR |
| 100+ | 2.17 EUR |
| 500+ | 1.75 EUR |
| IRF6646TRPBF |
|
Hersteller: Infineon Technologies
MOSFETs 80V 1 N-CH HEXFET 9.5mOhms 36nC
MOSFETs 80V 1 N-CH HEXFET 9.5mOhms 36nC
auf Bestellung 7640 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.22 EUR |
| 10+ | 3.09 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.2 EUR |
| 2500+ | 2.12 EUR |