Technische Details IRF6674TRPBF Infineon Technologies
Description: MOSFET N-CH 60V 13.4A DIRECTFET, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DIRECTFET™ MZ, Vgs(th) (Max) @ Id: 4.9V @ 100µA, Power Dissipation (Max): 3.6W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MZ, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V.
Weitere Produktangebote IRF6674TRPBF nach Preis ab 2.5 EUR bis 6.33 EUR
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IRF6674TRPBF | Infineon Technologies |
 Description: MOSFET N-CH 60V 13.4A DIRECTFETVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DIRECTFET™ MZ Vgs(th) (Max) @ Id: 4.9V @ 100µA Power Dissipation (Max): 3.6W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MZ Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 60 V |
auf Bestellung 9600 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF6674TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 60V 13.4A 7-Pin Direct-FET MZ T/R |
auf Bestellung 9600 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6674TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 13.4A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MZ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V Power Dissipation (Max): 3.6W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 100µA Supplier Device Package: DIRECTFET™ MZ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
auf Bestellung 13524 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF6674TRPBF | Infineon Technologies |
MOSFETs 60V 1 N-CH HEXFET 11mOhms 24nC |
auf Bestellung 8141 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF6674TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 60V 13.4A 7-Pin Direct-FET MZ T/R |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF6674TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13.4A DIRECTFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Description: MOSFET N-CH 60V 13.4A DIRECTFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 9600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4800+ | 2.53 EUR |
| IRF6674TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 60V 13.4A 7-Pin Direct-FET MZ T/R
Trans MOSFET N-CH Si 60V 13.4A 7-Pin Direct-FET MZ T/R
auf Bestellung 9600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4800+ | 2.53 EUR |
| IRF6674TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13.4A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V
Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 60V 13.4A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V
Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 13524 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.36 EUR |
| 10+ | 3.52 EUR |
| 100+ | 2.78 EUR |
| 500+ | 2.51 EUR |
| 1000+ | 2.5 EUR |
| IRF6674TRPBF |
|
Hersteller: Infineon Technologies
MOSFETs 60V 1 N-CH HEXFET 11mOhms 24nC
MOSFETs 60V 1 N-CH HEXFET 11mOhms 24nC
auf Bestellung 8141 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.4 EUR |
| 10+ | 3.71 EUR |
| 100+ | 2.93 EUR |
| 500+ | 2.78 EUR |
| IRF6674TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 60V 13.4A 7-Pin Direct-FET MZ T/R
Trans MOSFET N-CH Si 60V 13.4A 7-Pin Direct-FET MZ T/R
auf Bestellung 4800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 6.33 EUR |
| 40+ | 4.43 EUR |
| 50+ | 3.63 EUR |
| 100+ | 3.36 EUR |
| 200+ | 3.28 EUR |
| 500+ | 2.94 EUR |
| 1000+ | 2.69 EUR |
| 2000+ | 2.63 EUR |
| 4800+ | 2.55 EUR |