IRF6674TRPBF Infineon Technologies
auf Bestellung 9600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4800+ | 2.12 EUR |
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Technische Details IRF6674TRPBF Infineon Technologies
Description: MOSFET N-CH 60V 13.4A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MZ, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V, Power Dissipation (Max): 3.6W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 4.9V @ 100µA, Supplier Device Package: DIRECTFET™ MZ, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V.
Weitere Produktangebote IRF6674TRPBF nach Preis ab 1.89 EUR bis 5.32 EUR
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IRF6674TRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 60V 13.4A 7-Pin Direct-FET MZ T/R |
auf Bestellung 9600 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6674TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 13.4A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MZ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V Power Dissipation (Max): 3.6W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 100µA Supplier Device Package: DIRECTFET™ MZ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
auf Bestellung 9600 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF6674TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 13.4A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MZ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V Power Dissipation (Max): 3.6W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 100µA Supplier Device Package: DIRECTFET™ MZ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
auf Bestellung 13524 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF6674TRPBF | Hersteller : Infineon Technologies |
MOSFETs 60V 1 N-CH HEXFET 11mOhms 24nC |
auf Bestellung 8141 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF6674TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 13.4A 7-Pin Direct-FET MZ T/R |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6674TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 13.4A 7-Pin Direct-FET MZ T/R |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6674TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 13.4A 7-Pin Direct-FET MZ T/R |
Produkt ist nicht verfügbar |
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IRF6674TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 13.4A 7-Pin Direct-FET MZ T/R |
Produkt ist nicht verfügbar |
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IRF6674TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 67A; 89W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 67A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 89W Technology: HEXFET® Anzahl je Verpackung: 4800 Stücke |
Produkt ist nicht verfügbar |
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IRF6674TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 67A; 89W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 67A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 89W Technology: HEXFET® |
Produkt ist nicht verfügbar |