IRF6726MTRPBF Infineon Technologies
auf Bestellung 9501 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 62+ | 2.52 EUR |
| 64+ | 2.38 EUR |
| 65+ | 2.16 EUR |
| 100+ | 2.01 EUR |
| 250+ | 1.9 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.74 EUR |
| 3000+ | 1.72 EUR |
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Technische Details IRF6726MTRPBF Infineon Technologies
Description: MOSFET N-CH 30V 32A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MT, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 150µA, Supplier Device Package: DIRECTFET™ MT, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V.
Weitere Produktangebote IRF6726MTRPBF nach Preis ab 1.72 EUR bis 8.63 EUR
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IRF6726MTRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 30V 32A 7-Pin Direct-FET MT T/R |
auf Bestellung 9501 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6726MTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 32A DIRECTFET Packaging: Bulk Package / Case: DirectFET™ Isometric MT Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: DIRECTFET™ MT Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V |
auf Bestellung 1480 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF6726MTRPBF | Hersteller : Infineon / IR |
MOSFET 30V 1 N-CH HEXFET DIRECTFET MX |
auf Bestellung 3600 Stücke: Lieferzeit 14-28 Tag (e) |
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IRF6726MTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 180A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 4800 Stücke |
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IRF6726MTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 32A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MT Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: DIRECTFET™ MT Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V |
Produkt ist nicht verfügbar |
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IRF6726MTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 32A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MT Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: DIRECTFET™ MT Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V |
Produkt ist nicht verfügbar |
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IRF6726MTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 180A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |