IRF6726MTRPBF Infineon Technologies
auf Bestellung 9501 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 62+ | 2.41 EUR |
| 64+ | 2.27 EUR |
| 65+ | 2.06 EUR |
| 100+ | 1.92 EUR |
| 250+ | 1.82 EUR |
| 500+ | 1.68 EUR |
| 1000+ | 1.66 EUR |
| 3000+ | 1.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF6726MTRPBF Infineon Technologies
Description: MOSFET N-CH 30V 32A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MT, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 150µA, Supplier Device Package: DIRECTFET™ MT, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V.
Weitere Produktangebote IRF6726MTRPBF nach Preis ab 1.65 EUR bis 5.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IRF6726MTRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 30V 32A 7-Pin Direct-FET MT T/R |
auf Bestellung 9501 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
IRF6726MTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 32A DIRECTFET Packaging: Bulk Package / Case: DirectFET™ Isometric MT Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: DIRECTFET™ MT Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V |
auf Bestellung 1480 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
 |
IRF6726MTRPBF | Hersteller : Infineon Technologies |
MOSFETs 30V 1 N-CH HEXFET DIRECTFET MX |
auf Bestellung 492 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF6726MTRPBF | Hersteller : Infineon / IR |
MOSFET 30V 1 N-CH HEXFET DIRECTFET MX |
auf Bestellung 3600 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
| IRF6726MTRPBF | Hersteller : INFINEON TECHNOLOGIES |
IRF6726MTRPBF SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||||||
|
|
IRF6726MTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 32A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MT Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: DIRECTFET™ MT Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V |
Produkt ist nicht verfügbar |
|||||||||||||||||||
|
|
IRF6726MTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 32A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MT Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: DIRECTFET™ MT Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V |
Produkt ist nicht verfügbar |