IRF6785MTRPBF Infineon Technologies

Description: MOSFET N-CH 200V 3.4A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DIRECTFET™ MZ, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 2.8W (Ta), 57W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MZ, Packaging: Tape & Reel (TR).