IRF6811STRPBF International Rectifier
Hersteller: International RectifierDescription: MOSFET N-CH 25V 19A/74A DIRECTFT
Packaging: Bulk
Package / Case: DirectFET™ Isometric SQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 19A, 10V
Power Dissipation (Max): 2.1W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: DirectFET™ Isometric SQ
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 13 V
auf Bestellung 35276 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 430+ | 1.14 EUR |
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Technische Details IRF6811STRPBF International Rectifier
Description: MOSFET N-CH 25V 19A/74A DIRECTFT, Packaging: Bulk, Package / Case: DirectFET™ Isometric SQ, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 19A, 10V, Power Dissipation (Max): 2.1W (Ta), 32W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 35µA, Supplier Device Package: DirectFET™ Isometric SQ, Part Status: Active, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 13 V.
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