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IRF7103PBF                    



Hersteller: IR

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Technische Details IRF7103PBF                     IR

Description: MOSFET 2N-CH 50V 3A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 3A, Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key.

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IRF7103PBF Hersteller : International Rectifier irf7103.pdf (MFET,N-CH,DUAL,50V,3A,SO-8, Pbf) Група товару: Транзистори Од. вим: шт
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IRF7103PBF Hersteller : International Rectifier/Infineon irf7103pbf.pdf 2N-канальний ПТ, Udss, В = 50, Id = 3 А, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 290 @ 25, Qg, нКл = 30 @ 10 В, Rds = 130 мОм @ 3 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 3 В @ 250 мкА,... Група товару: Транзистори Корпус: SOICN-8 Од. вим: шт
Anzahl je Verpackung: 95 Stücke
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IRF7103PBF IRF7103PBF Hersteller : Infineon Technologies infineon-irf7103-datasheet-en.pdf Description: MOSFET 2N-CH 50V 3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7103PBF IRF7103PBF Hersteller : Infineon Technologies irf7103pbf-1228364.pdf MOSFETs 50V DUAL N-CH HEXFET 130mOhms 12nC
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