Technische Details IRF7103PBF IR
Description: MOSFET 2N-CH 50V 3A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 3A, Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key.
Weitere Produktangebote IRF7103PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRF7103PBF | International Rectifier |
 (MFET,N-CH,DUAL,50V,3A,SO-8, Pbf) Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IRF7103PBF | International Rectifier/Infineon |
2N-канальний ПТ, Udss, В = 50, Id = 3 А, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 290 @ 25, Qg, нКл = 30 @ 10 В, Rds = 130 мОм @ 3 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 3 В @ 250 мкА,... Транзистори Корпус: SOICN-8 Од. вим: шт Anzahl je Verpackung: 95 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IRF7103PBF | Infineon Technologies |
Description: MOSFET 2N-CH 50V 3A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRF7103PBF | Infineon Technologies |
MOSFETs 50V DUAL N-CH HEXFET 130mOhms 12nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF7103PBF |
|
Hersteller: International Rectifier
(MFET,N-CH,DUAL,50V,3A,SO-8, Pbf) Транзистори
(MFET,N-CH,DUAL,50V,3A,SO-8, Pbf) Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7103PBF |
|
Hersteller: International Rectifier/Infineon
2N-канальний ПТ, Udss, В = 50, Id = 3 А, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 290 @ 25, Qg, нКл = 30 @ 10 В, Rds = 130 мОм @ 3 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 3 В @ 250 мкА,... Транзистори Корпус: SOICN-8 Од. вим: шт
Anzahl je Verpackung: 95 Stücke
2N-канальний ПТ, Udss, В = 50, Id = 3 А, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 290 @ 25, Qg, нКл = 30 @ 10 В, Rds = 130 мОм @ 3 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 3 В @ 250 мкА,... Транзистори Корпус: SOICN-8 Од. вим: шт
Anzahl je Verpackung: 95 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7103PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 50V 3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Description: MOSFET 2N-CH 50V 3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7103PBF |
|
Hersteller: Infineon Technologies
MOSFETs 50V DUAL N-CH HEXFET 130mOhms 12nC
MOSFETs 50V DUAL N-CH HEXFET 130mOhms 12nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH