Technische Details IRF7301TRPBF Infineon / IR
Description: MOSFET 2N-CH 20V 5.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.2A, Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 700mV @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
Weitere Produktangebote IRF7301TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IRF7301TRPBF Produktcode: 51514
zu Favoriten hinzufügen
Lieblingsprodukt
|
 Verschiedene Bauteile > Verschiedene Bauteile 2 |
Produkt ist nicht verfügbar
|
||
 |
IRF7301TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 20V 5.2A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
|
 |
IRF7301TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 20V 5.2A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
|
 |
IRF7301TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 20V 5.2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |