Technische Details IRF7301TRPBF
- MOSFET
- Transistor Type:MOSFET
- Transistor Polarity:Dual N Channel
- Continuous Drain Current, Id:5.2A
- Package/Case:8-SOIC
- Power Dissipation, Pd:2W
- Drain Source On Resistance @ 2.7V:70mohm
- Drain Source On Resistance @ 4.5V:50mohm
Weitere Produktangebote IRF7301TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF7301TRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 20V 5.2A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7301TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 20V 5.2A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7301TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 20V 5.2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |
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IRF7301TRPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT DUAL NCh 20V 5.2A |
Produkt ist nicht verfügbar |