IRF7306TR Infineon
Hersteller: Infineon
2xP-MOSFET -3,6A -30V 2W 0.1Ω IRF7306 TIRF7306
Anzahl je Verpackung: 10 Stücke
2xP-MOSFET -3,6A -30V 2W 0.1Ω IRF7306 TIRF7306
Anzahl je Verpackung: 10 Stücke
auf Bestellung 380 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.76 EUR |
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Technische Details IRF7306TR Infineon
Description: MOSFET 2P-CH 30V 3.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.6A, Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V, Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF7306TR | Hersteller : Infineon Technologies |
Description: MOSFET 2P-CH 30V 3.6A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
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