IRF7307PBF
Produktcode: 28597
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller: IR
Gehäuse: SO-8
Uds,V: 20
Idd,A: 05.07.2015
Rds(on), Ohm: 01.05.2000
Ciss, pF/Qg, nC: 660/20
Bem.: N+P (4.7A)
JHGF: SMD
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF7307PBF IR
- MOSFET, DUAL, NP, LOGIC, SO-8
- Transistor Type:MOSFET
- Transistor Polarity:NP
- Typ Voltage Vds:20V
- Cont Current Id:4.3A
- On State Resistance:0.05ohm
- Voltage Vgs Rds on Measurement:4.5V
- Typ Voltage Vgs th:0.7V
- Case Style:SOIC
- Termination Type:SMD
- Cont Current Id N Channel 2:5.2A
- Cont Current Id P Channel:4.3A
- Current Temperature:25`C
- External Depth:5.2mm
- External Length / Height:1.75mm
- External Width:4.05mm
- Full Power Rating Temperature:25`C
- Max Junction Temperature Tj:150`C
- Max On State Resistance N Channel:0.05ohm
- Max On State Resistance P Channel:0.09ohm
- Max Voltage Vds:20V
- Min Junction Temperature, Tj:-55`C
- No. of Pins:8
- No. of Transistors:2
- Power Dissipation:2W
- Power Dissipation Pd:2W
- Pulse Current Idm:17A
- Pulse Current Idm N Channel 2:21A
- Pulse Current Idm P Channel:17A
- Row Pitch:6.3mm
- SMD Marking:F7307
- Voltage Vds:20V
- Transistor Case Style:SOIC
Weitere Produktangebote IRF7307PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRF7307PBF | Hersteller : International Rectifier/Infineon |
Транзистор польовий N+P, Udss, В = 20, Id = 5,2 А, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 660 @ 15, Qg, нКл = 20 @ 4,5 В, Rds = 50 мОм @ 2,6 A, 4,5 В, Tексп, °C = -55...+150, Ugs(th) = 0,7 В @ 250 мкА, td(on)+tr = 9, td(off)+tf = 32, Id2 = 4, Anzahl je Verpackung: 95 Stücke |
verfügbar 61 Stücke: |
||
| IRF7307PBF | Hersteller : International Rectifier |
(HEXFET,DUAL,N+P-CH,LL,1.4W,20V,4A,SO-8 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
||
 |
IRF7307PBF | Hersteller : Infineon Technologies |
Description: MOSFET N/P-CH 20V 5.2A/4.3A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |
|
 |
IRF7307PBF | Hersteller : Infineon Technologies |
MOSFET 20V DUAL N / P CH 12V VGS MAX |
Produkt ist nicht verfügbar |