Technische Details IRF7307TR IOR
Description: MOSFET 2N-CH 20V 5.2A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 4.3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, 610pF @ 15V, Rds On (Max) @ Id, Vgs: 53mOhm @ 2.6A, 4.5V, 100mOhm @ 2.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 22nC @ 4.5V, Vgs(th) (Max) @ Id: 700mV @ 250µA, Supplier Device Package: 8-SOP.
Weitere Produktangebote IRF7307TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRF7307TR |
 Транзистор польовий 2N, Udss, В = 20, Id = 5,2 А, Ciss, пФ @ Uds, В = 660, 610, Qg, нКл = 20, 22, Rds = 53, 100 мОм, Ugs(th) = 700 мВ, Р, Вт = 2, Тексп, °C = -55...+150, Тип монт. = SMD,... Група товару: Транзистори Корпус: SOIC-8 Од. вим: штAnzahl je Verpackung: 3000 Stücke |
verfügbar 300 Stücke: |
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| IRF7307TR | Hersteller : UMW |
(HEXFET,DUAL,N+P-CH,LL,1.4W,20V,4A,SO-8) Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IRF7307TR | Hersteller : UMW |
Description: MOSFET 2N-CH 20V 5.2A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 4.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, 610pF @ 15V Rds On (Max) @ Id, Vgs: 53mOhm @ 2.6A, 4.5V, 100mOhm @ 2.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 22nC @ 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SOP |
Produkt ist nicht verfügbar |