
IRF7307TR UMW

Description: MOSFET 2N-CH 20V 5.2A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 4.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, 610pF @ 15V
Rds On (Max) @ Id, Vgs: 53mOhm @ 2.6A, 4.5V, 100mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 22nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 2898 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
13+ | 1.36 EUR |
21+ | 0.85 EUR |
100+ | 0.55 EUR |
500+ | 0.42 EUR |
1000+ | 0.38 EUR |
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Technische Details IRF7307TR UMW
Description: MOSFET 2N-CH 20V 5.2A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 4.3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, 610pF @ 15V, Rds On (Max) @ Id, Vgs: 53mOhm @ 2.6A, 4.5V, 100mOhm @ 2.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 22nC @ 4.5V, Vgs(th) (Max) @ Id: 700mV @ 250µA, Supplier Device Package: 8-SOP.
Weitere Produktangebote IRF7307TR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IRF7307TR | Hersteller : IOR |
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auf Bestellung 5870 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7307TR | Hersteller : IOR |
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auf Bestellung 846 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7307TR | Hersteller : IR |
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auf Bestellung 159 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7307TR | Hersteller : UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 4.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, 610pF @ 15V Rds On (Max) @ Id, Vgs: 53mOhm @ 2.6A, 4.5V, 100mOhm @ 2.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 22nC @ 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SOP |
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