IRF730APBF-BE3 Vishay / Siliconix
auf Bestellung 1593 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.41 EUR |
| 10+ | 1.33 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.28 EUR |
| 1000+ | 1.23 EUR |
| 2000+ | 1.22 EUR |
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Technische Details IRF730APBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 400V 5.5A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V.
Weitere Produktangebote IRF730APBF-BE3 nach Preis ab 1.3 EUR bis 3.45 EUR
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IRF730APBF-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 400V 5.5A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 978 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF730APBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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| IRF730APBF-BE3 | Hersteller : Vishay |
Surface Mount Fast Switching, Low Resistance Power MOSFET |
Produkt ist nicht verfügbar |
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| IRF730APBF-BE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |