IRF730SPBF VISHAY
Hersteller: VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 148 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| 65+ | 1.12 EUR |
| 80+ | 0.90 EUR |
| 84+ | 0.86 EUR |
| 1000+ | 0.83 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF730SPBF VISHAY
Description: MOSFET N-CH 400V 5.5A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V, Power Dissipation (Max): 3.1W (Ta), 74W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V.
Weitere Produktangebote IRF730SPBF nach Preis ab 0.86 EUR bis 1.73 EUR
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IRF730SPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.5A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF730SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-263AB |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF730SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-263AB |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF730SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-263AB |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF730SPBF |
IRF730SPBF Транзисторы MOS FET |
auf Bestellung 1049 Stücke: Lieferzeit 7-21 Tag (e) |
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IRF730SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-263AB |
Produkt ist nicht verfügbar |
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IRF730SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-263AB |
Produkt ist nicht verfügbar |
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IRF730SPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 400V 5.5A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF730SPBF | Hersteller : Vishay Semiconductors |
MOSFETs N-Chan 400V 5.5 Amp |
Produkt ist nicht verfügbar |