IRF7317PBF
Hersteller: IRТранз. Пол. ММ 1N-1P-HEXFET logik SO8 Udss=+-20V; Id=6,6A; Id=-5,3A Pdmax=2,0W; Rds=0,029 Ohm
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.27 EUR |
| 10+ | 3.78 EUR |
| 100+ | 3.43 EUR |
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Technische Details IRF7317PBF IR
Description: MOSFET N/P-CH 20V 6.6A/5.3A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A, Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V, Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 700mV @ 250µA, Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key.
Weitere Produktangebote IRF7317PBF
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IRF7317PBF Produktcode: 150905
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IRF7317PBF | Hersteller : Infineon Technologies |
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IRF7317PBF | Hersteller : Infineon Technologies |
Description: MOSFET N/P-CH 20V 6.6A/5.3A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key |
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IRF7317PBF | Hersteller : Infineon Technologies |
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