
IRF7319TR UMW

Description: MOSFET N/P-CH 30V 6.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 710pF @ 25V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.8A, 10V, 60mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 34nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.46 EUR |
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Technische Details IRF7319TR UMW
Description: MOSFET N/P-CH 30V 6.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.9A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 710pF @ 25V, Rds On (Max) @ Id, Vgs: 31mOhm @ 5.8A, 10V, 60mOhm @ 4.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 34nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOP.
Weitere Produktangebote IRF7319TR nach Preis ab 0.66 EUR bis 0.82 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
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IRF7319TR | Hersteller : JGSEMI |
![]() Anzahl je Verpackung: 50 Stücke |
auf Bestellung 120 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF7319TR | Hersteller : UMW |
![]() Anzahl je Verpackung: 25 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF7319TR | Hersteller : IR |
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auf Bestellung 359 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7319TR | Hersteller : UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.9A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 710pF @ 25V Rds On (Max) @ Id, Vgs: 31mOhm @ 5.8A, 10V, 60mOhm @ 4.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 34nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
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