IRF7319TR UMW
Hersteller: UMWDescription: MOSFET N/P-CH 30V 6.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 30V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 710pF @ 25V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.8A, 10V, 60mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 34nC @ 10V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.46 EUR |
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Technische Details IRF7319TR UMW
Description: MOSFET N/P-CH 30V 6.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Drain to Source Voltage (Vdss): 30V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOP, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.9A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 710pF @ 25V, Rds On (Max) @ Id, Vgs: 31mOhm @ 5.8A, 10V, 60mOhm @ 4.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 34nC @ 10V.
Weitere Produktangebote IRF7319TR nach Preis ab 0.54 EUR bis 0.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| IRF7319TR | Hersteller : HXY MOSFET |
Transistor N/P-Channel MOSFET; 30V; 20V; 30mOhm/70mOhm; 6A/5,5A; 2W; -55°C ~ 150°C; Equivalent: IRF7319; IRF7319TR; SP001555176; SP001563414; IRF7319TR HXY MOSFET TIRF7319 HXY Anzahl je Verpackung: 50 Stücke |
auf Bestellung 250 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF7319TR | Hersteller : JGSEMI |
Transistor N/P-Channel MOSFET; 30V; 20V; 35mOhm/55mOhm; 7A/6,5A; 2,5W; -55°C ~ 125°C; Equivalent: IRF7319; IRF7319TR; SP001555176; SP001563414; IRF7319TR JGSEMI TIRF7319 JGS Anzahl je Verpackung: 50 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF7319TR | Hersteller : JGSEMI |
Transistor N/P-Channel MOSFET; 30V; 20V; 35mOhm/55mOhm; 7A/6,5A; 2,5W; -55°C ~ 125°C; Equivalent: IRF7319; IRF7319TR; SP001555176; SP001563414; IRF7319TR JGSEMI TIRF7319 JGS Anzahl je Verpackung: 50 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF7319TR | Hersteller : UMW |
Transistor N/P-Channel MOSFET; 30V; 20V; 48mOhm/100mOhm; 6,5A/4,9A; 2W; -55°C ~ 150°C; Equivalent: IRF7319; IRF7319TR; SP001555176; SP001563414; IRF7319TR UMW TIRF7319 UMW Anzahl je Verpackung: 25 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF7319TR | Hersteller : IR |
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auf Bestellung 359 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7319TR | Hersteller : UMW |
Description: MOSFET N/P-CH 30V 6.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Drain to Source Voltage (Vdss): 30V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.9A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 710pF @ 25V Rds On (Max) @ Id, Vgs: 31mOhm @ 5.8A, 10V, 60mOhm @ 4.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 34nC @ 10V |
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