Technische Details IRF7326D2PBF
- MOSFET, P, FETKY, SO-8
- Transistor Polarity:P
- Max Current Id:29A
- Max Voltage Vds:30V
- On State Resistance:0.1ohm
- Power Dissipation:2W
- Transistor Case Style:SOIC
- SVHC:No SVHC
- Av Current If:2.8A
- Case Style:SOIC
- Cont Current Id:3.6A
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Max Voltage Vf:0.57V
- Max Voltage Vgs th:-2V
- Min Voltage Vgs th:-1V
- No. of Transistors:1
- Power Dissipation Pd:2W
- Pulse Current Idm:29A
- SMD Marking:F7326
- Termination Type:SMD
- Transistor Type:MOSFET
- Typ Voltage Vds:-30V
- Typ Voltage Vgs th:-1V
- Voltage Vgs Rds on Measurement:-10V
Weitere Produktangebote IRF7326D2PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRF7326D2PBF | Hersteller : Infineon Technologies |
 Trans MOSFET P-CH Si 30V 3.6A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7326D2PBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 3.6A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
Produkt ist nicht verfügbar |