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IRF7328TR

IRF7328TR UMW

41e71e03d6996c2a9a1bcdbade0d63e2.pdf Hersteller: UMW
Description: MOSFET 2P-CH 30V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 2987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
19+0.96 EUR
100+0.63 EUR
500+0.48 EUR
1000+0.44 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IRF7328TR UMW

Description: MOSFET 2P-CH 30V 8A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V, Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP.

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IRF7328TR Hersteller : IR 41e71e03d6996c2a9a1bcdbade0d63e2.pdf 01+ PLCC-28
auf Bestellung 90 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRF7328TR Hersteller : IR 41e71e03d6996c2a9a1bcdbade0d63e2.pdf 08+ LQFP44
auf Bestellung 250 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRF7328TR IRF7328TR Hersteller : UMW 41e71e03d6996c2a9a1bcdbade0d63e2.pdf Description: MOSFET 2P-CH 30V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
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Im Einkaufswagen  Stück im Wert von  UAH