IRF734L Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 450V 4.9A I2PAK
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
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Technische Details IRF734L Vishay Siliconix
Description: MOSFET N-CH 450V 4.9A I2PAK, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 450 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active.