IRF7350PBF Infineon
Hersteller: InfineonТранз. Пол. ММ N&P-HEXFET SO8 Udss=100V; Id=(2.1; 1.5)A; Pdmax=2W; Rds=0,21 Ohm
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.44 EUR |
| 10+ | 6.88 EUR |
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Technische Details IRF7350PBF Infineon
Description: MOSFET N/P-CH 100V 2.1A/1.5A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A, Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
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IRF7350PBF | Hersteller : Infineon Technologies |
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IRF7350PBF | Hersteller : Infineon Technologies |
Description: MOSFET N/P-CH 100V 2.1A/1.5A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
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