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IRF7351TR

IRF7351TR UMW

6ae0be5e559461cac17a609b04b5392e.pdf Hersteller: UMW
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 8-SOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.5 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IRF7351TR UMW

Description: MOSFET 2N-CH 60V 8A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V, Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 50µA, Supplier Device Package: 8-SOP.

Weitere Produktangebote IRF7351TR nach Preis ab 4.22 EUR bis 4.22 EUR

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IRF7351TR Hersteller : Infineon 6ae0be5e559461cac17a609b04b5392e.pdf 2xN -MOSFET HEXFET 8A 60V 2W 0.18Ω IRF7351 TIRF7351
Anzahl je Verpackung: 10 Stücke
auf Bestellung 486 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+4.22 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRF7351TR IRF7351TR Hersteller : UMW 6ae0be5e559461cac17a609b04b5392e.pdf Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 8-SOP
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Im Einkaufswagen  Stück im Wert von  UAH