IRF7404PBF International Rectifier/Infineon
Hersteller: International Rectifier/Infineon
Р-канальний ПТ; Udss, В = 20; Id = 6,7 A; Ptot, Вт = 2,5; Тип монт. = smd; Ciss, пФ @ Uds, В = 1500 @ 15; Qg, нКл = 50 @ 4,5 В; Rds = 40 мОм @ 3,2 A, 4,5 В; Tексп, °C = -55...+150; Ugs(th) = 700 мВ @ 250 мкА; SOICN-8
Р-канальний ПТ; Udss, В = 20; Id = 6,7 A; Ptot, Вт = 2,5; Тип монт. = smd; Ciss, пФ @ Uds, В = 1500 @ 15; Qg, нКл = 50 @ 4,5 В; Rds = 40 мОм @ 3,2 A, 4,5 В; Tексп, °C = -55...+150; Ugs(th) = 700 мВ @ 250 мкА; SOICN-8
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10+ | 0.66 EUR |
11+ | 0.57 EUR |
100+ | 0.5 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF7404PBF International Rectifier/Infineon
Description: MOSFET P-CH 20V 6.7A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V.
Weitere Produktangebote IRF7404PBF nach Preis ab 0.42 EUR bis 0.57 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
---|---|---|---|---|---|---|---|---|---|---|---|
IRF7404PBF(Mikroschaltung) Produktcode: 22642 |
Hersteller : IR |
Transistoren > Transistoren P-Kanal-Feld Gehäuse: SO-8 Uds,V: 20 Id,A: 6.7 Rds(on),Om: 0.040 Ciss, pF/Qg, nC: 1500/50 /: SMD |
Produkt ist nicht verfügbar
|
|
|||||||
IRF7404PBF | Hersteller : Infineon Technologies | Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC Tube |
Produkt ist nicht verfügbar |
||||||||
IRF7404PBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 20V 6.7A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V |
Produkt ist nicht verfügbar |
||||||||
IRF7404PBF | Hersteller : Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 40mOhms 33.3nC |
Produkt ist nicht verfügbar |