IRF740ALPBF VISHAY
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 996 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
34+ | 2.14 EUR |
38+ | 1.93 EUR |
46+ | 1.57 EUR |
49+ | 1.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF740ALPBF VISHAY
Description: MOSFET N-CH 400V 10A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V, Power Dissipation (Max): 3.1W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: I2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V.
Weitere Produktangebote IRF740ALPBF nach Preis ab 1.43 EUR bis 7.2 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRF740ALPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Pulsed drain current: 40A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 996 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
IRF740ALPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 400V 10A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
auf Bestellung 865 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
IRF740ALPBF | Hersteller : Vishay Semiconductors | MOSFET 400V N-CH HEXFET TO-26 |
auf Bestellung 1636 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||
IRF740ALPBF | Hersteller : Vishay | Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-262 |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||
IRF740ALPBF | Hersteller : Vishay | Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-262 |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||
IRF740ALPBF | Hersteller : Vishay | Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-262 |
Produkt ist nicht verfügbar |