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IRF7413(PBF)


Hersteller: IR
SOP8
auf Bestellung 82 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details IRF7413(PBF) IR

Description: MOSFET N-CH 30V 13A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 7.3A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V.

Weitere Produktangebote IRF7413(PBF)

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IRF7413PBF International Rectifier/Infineon irf7413pbf.pdf description N-канальний ПТ, Udss, В = 30, Id = 13, Ciss, пФ @ Uds, В = 1800 @ 25, Qg, нКл = 52 @ 7,3 A, Rds = 18 мО @ 4,5 B, 3,7 A, Ugs(th) = 1...3 @ Vds = Vgs, 250 uA, Р, Вт = 2,5 Вт, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOICN-8 Од. вим: ш
Anzahl je Verpackung: 100 Stücke
Produkt ist nicht verfügbar
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IRF7413PBF IRF7413PBF Infineon Technologies irf7413pbf.pdf?fileId=5546d462533600a4015355fa8e901bb8 description Description: MOSFET N-CH 30V 13A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7413PBF IRF7413PBF Infineon Technologies Infineon_IRF7413_DataSheet_v01_01_EN.pdf description MOSFETs 30V 1 N-CH HEXFET 11mOhms 44nC
Produkt ist nicht verfügbar
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IRF7413PBF description irf7413pbf.pdf
Hersteller: International Rectifier/Infineon
N-канальний ПТ, Udss, В = 30, Id = 13, Ciss, пФ @ Uds, В = 1800 @ 25, Qg, нКл = 52 @ 7,3 A, Rds = 18 мО @ 4,5 B, 3,7 A, Ugs(th) = 1...3 @ Vds = Vgs, 250 uA, Р, Вт = 2,5 Вт, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOICN-8 Од. вим: ш
Anzahl je Verpackung: 100 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7413PBF description irf7413pbf.pdf?fileId=5546d462533600a4015355fa8e901bb8
IRF7413PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7413PBF description Infineon_IRF7413_DataSheet_v01_01_EN.pdf
IRF7413PBF
Hersteller: Infineon Technologies
MOSFETs 30V 1 N-CH HEXFET 11mOhms 44nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH