IRF7420PBF
Hersteller:
IRF7420PBF Транзисторы HEXFET
auf Bestellung 11 Stücke:
Lieferzeit 7-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF7420PBF
Description: MOSFET P-CH 12V 11.5A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V.
Weitere Produktangebote IRF7420PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRF7420PBF | Hersteller : Infineon |
MOSFET P-CH 12V 11.5A SOIC-8 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
||
| IRF7420PBF | Hersteller : International Rectifier |
MOSFET P-CH 12V 11.5A SOIC-8 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
||
| IRF7420PBF | Hersteller : International Rectifier/Infineon |
P-канальний ПТ, Udss, В = 12, Id = 11,5 А, Ptot, Вт = 2,5, Тип монт. = smd, Ciss, пФ @ Uds, В = 3529 @ 10, Qg, нКл = 38 @ 4,5 В, Rds = 14 мОм @ 11,5 A, 4,5 В, Tексп, °C = -55...+150, Ugs(th) = 0,9 @ 250 мкA,... Група товару: Транзистори Корпус: SOICN-8 Од Anzahl je Verpackung: 95 Stücke |
Produkt ist nicht verfügbar |
||
 |
IRF7420PBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 12V 11.5A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V |
Produkt ist nicht verfügbar |