IRF7421D1
Hersteller: IRТранз. Пол. ММ N-FETKY (с диодом Шоттки) SO8 Udss=30V; Id=5,8A; Pdmax=2W; Rds=0,035 Ohm; Ufm=0,5V(If=1A)
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 2.2 EUR |
| 10+ | 1.94 EUR |
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Technische Details IRF7421D1 IR
Description: MOSFET N-CH 30V 5.8A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V.
Weitere Produktangebote IRF7421D1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF7421D1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 5.8A 8-Pin SOIC |
Produkt ist nicht verfügbar |
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IRF7421D1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 5.8A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
Produkt ist nicht verfügbar |