IRF7456TRPBF Infineon Technologies
auf Bestellung 2905 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 90+ | 1.75 EUR |
| 100+ | 1.62 EUR |
| 250+ | 1.49 EUR |
| 500+ | 1.38 EUR |
| 1000+ | 1.29 EUR |
| 2500+ | 1.2 EUR |
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Technische Details IRF7456TRPBF Infineon Technologies
Description: MOSFET N-CH 20V 16A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V.
Weitere Produktangebote IRF7456TRPBF nach Preis ab 2.55 EUR bis 4.42 EUR
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IRF7456TRPBF | Hersteller : Infineon / IR |
 MOSFET MOSFT 20V 16A 6.5mOhm 41nC |
auf Bestellung 3300 Stücke: Lieferzeit 14-28 Tag (e) |
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IRF7456TRPBF Produktcode: 176316 |
Transistoren > MOSFET N-CH |
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IRF7456TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 20V 16A 8-Pin SOIC T/R |
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IRF7456TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8 Case: SO8 Drain-source voltage: 20V Drain current: 16A Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Anzahl je Verpackung: 4000 Stücke |
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IRF7456TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 20V 16A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V |
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IRF7456TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 20V 16A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V |
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IRF7456TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8 Case: SO8 Drain-source voltage: 20V Drain current: 16A Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Mounting: SMD |
Produkt ist nicht verfügbar |